Engineer, design

Ph3Design/Senior Design Engineer – NAND datapath (NVE Engineering) /h3pMicron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The Non‑Volatile NAND Design Engineering group designs and optimises analog, digital and mixed‑signal circuits for advanced NAND Flash memory products. /ph3Position Overview /h3pAs a Design Engineer in the NVE Design Engineering Datapath group at Micron Semiconductor Italia, you will contribute to the development of best‑in‑class NAND Flash memory products, focusing on datapath architectures and high‑speed interfaces. You will design, optimise and validate NAND datapath logic and DDR high‑speed interfaces, working at block and sub‑system level and contributing to full‑chip integration. /ph3Responsibilities /h3ulliDesign and optimise high‑speed datapath and interface circuits, ensuring timing closure and performance at block and sub‑system level. /liliTranslate system and interface requirements into circuit architectures and transistor‑level implementations, balancing performance, power, and area. /liliPerform functional, timing and signal integrity verification using advanced simulation methodologies (including PVT and corner analysis). /liliCollaborate with cross‑functional teams to ensure proper floorplan integration, manufacturability and alignment with product specifications. /liliDevelop and apply automation solutions (e.g., scripting, AI‑assisted methodologies) and support silicon validation, debug and documentation. /li /ulh3Minimum Qualifications /h3ulliM.S. or Ph.D. in Electrical Engineering, Electronics or a related field. /liliStrong knowledge of high‑speed digital, analog and mixed‑signal CMOS circuit design. /liliSolid understanding of timing, signal integrity, noise, variability and deep‑submicron device effects. /liliHands‑on experience with industry‑standard simulation tools (e.g., SPICE, mixed‑signal, RTL/Verilog‑based flows). /liliStrong problem‑solving and communication skills and ability to work effectively in dynamic, cross‑functional environments. /li /ulh3Preferred Qualifications /h3ulliExperience in NAND Flash or other non‑volatile memory technologies. /liliExperience with high‑speed interfaces (DDR, LPDDR, GDDR or SerDes). /liliFamiliarity with design automation, scripting (Python) or AI‑assisted design approaches. /liliUnderstanding of layout constraints, physical design flows and ESD considerations. /li /ulh3Compensation and Benefits /h3pBase salary range: €34,000 – €57,000 per year (B2 CCNL Level). /ppVariable plan subject to performance and variable objectives. Benefits include meal vouchers, corporate welfare, remote working allowance, supplementary health insurance, life coverage and Employee Assistance Program. /ph3Equal Employment Opportunity /h3pAll qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status. For assistance or reasonable accommodations, contact /p /p #J-18808-Ljbffr