H3strongAbout Huawei /strong /h3pHuawei is a leading global provider of information and communications technology (ICT) infrastructure and smart devices. With integrated solutions across four key domains – telecom networks, IT, smart devices, and cloud services – strongwe are committed to bringing digital to every person, home and organization for a fully connected, intelligent world. /strong /ppAt Huawei, innovation focuses on customer needs. We invest heavily in basic research, concentrating on technological breakthroughs that drive the world forward. We have more than strong200,000 employees /strong, of strongwhich 55% are employed in RD /strong, and we operate in more than 170 countries and regions. /ppHuawei invests more than strong20% of revenues in RD /strong every year: in the past 10 years our total strongRD investments exceed 150B USD /strong. /ppBy the end of 2023, Huawei held strong+140.000 active patents /strong. /ph3strongThe opportunity /strong /h3pWe are seeking a skilled and innovative transistor level strongGallium Nitride PA Designer /strong for next generation communication system. The successful candidate will play an important role in device estimation, circuit design and product development. This position offers an exciting opportunity to work based on the world’s leading gallium nitride technologies, contributing to the development of high power and high efficiency amplifier for cellular, base station even satellite applications. /ph3strongKey Responsibilities /strong /h3ulliLead the design, simulation, and optimization of gallium nitride power amplifier. /liliConduct research to investigate new gallium nitride technologies, materials, and methods to improve device. /liliPerform chip-level trade-off analyses to determine circuit parameters (e.g., system link budget, die size, modulation schemes). /liliDevelop and execute test plans for laboratory and field trials to validate system performance, identify improvements, and troubleshoot issues. /liliStay up-to-date with the latest developments in gallium nitride power amplifier technologies and related fields. /liliContribute to patent filings, technical papers, and publications in peer-reviewed journals and conferences. /li /ulh3strongRequired Qualifications /strong /h3ulliMaster’s degree or Ph.D. in microwave engineering, physics, or related fields. /liliProven experience in the design and analysis of gallium nitride power amplifier. /liliProficiency with related simulation tools (e.g., ADS, HFSS, Cadence). /liliStrong understanding of transistor level specifications and failure mechanism. /liliExperience with chip testing, performance validation, and troubleshooting in both lab and field environments. /liliKnowledge of wireless communication protocols, electromagnetic field theory, power amplifier theory. /liliStrong problem-solving skills and ability to work independently and as part of a collaborative team. /liliExcellent written and verbal communication skills. /li /ulh3strongPreferred Qualifications /strong /h3ulliExperience with the product level gallium nitride power amplifier design. /liliPublished papers or patents in the field of gallium nitride power amplifier or related technologies. /li /ulh3strongWhat We Offer /strong /h3pWe offer you an exciting professional career in one of the leading and fastest growing multinational telecommunication companies, challenging work and a competitive salary package. Personal development is ensured through many training opportunities in Western Europe and abroad. /p #J-18808-Ljbffr