Ferroelectric Memory Company in Agrate Brianza, Italy, is seeking an experienced IC Design Engineer specializing in CMOS analog/mixed-signal design and NVM devices. You will collaborate with teams in Milan and Dresden to develop innovative ferroelectric memory products. Ideal candidates have 5-10 years of experience, a degree in Electrical Engineering, and are fluent in English, with expertise in Cadence tools, Verilog, and a solid understanding of device physics. Join FMC and make significant contributions to next-generation memory technology.br#J-18808-Ljbffr