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Engineer research (catania)

Catania
Vishay Intertechnology
Pubblicato il 13 giugno
Descrizione

Engineer Research & Development SimulationApplylocations: Torino, ITtime type: Full timeposted on: Posted Todayjob requisition id: JR-14460We are seeking great talent to help us build The DNA of tech.Vishay manufactures one of the world's largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. We help the world's most in-demand technologies come to life. Every day our products touch your life and the lives of people across the world, though you likely do not know it. Come join us and help us build The DNA of tech.TMVishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). Learn more at www.Vishay.com. Do you want to help us build the DNA of tech.? Vishay Italy is currently seeking applicants for Power Semiconductor Simulation & Modeling Engineer. In this position, you will support the development and optimization of advanced power semiconductor technologies and packaging solutions for automotive and industrial applications and you will work closely with R&D;, package development, device engineering, reliability, manufacturing, and system/application engineering teams to support the design, simulation, validation, and optimization of Si, SiC, and GaN power devices and power modules.Job Location:Vishay Semiconductor Italiana spa is a site focused on the design, development and production of power diodes and power modules. There are around 300 employees currently working in Italy, and this number is constantly growing due to our expansion plans. The position will be located at our Design Center in Catania.What you will be doing:* Support modeling and simulation activities for power semiconductor devices and power modules.* Develop and validate electrical and electro-thermal models for power dies, packages, and modules.* Support SPICE-level modeling activities for Si, SiC

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